Wednesday programme

Duetto 1

8:30 WeA1 N. Werner, Ferdinand-Braun-Institut (FBH): High Power Tapered Semiconductor Optical Amplifiers with Active Astigmatism Control

8:45 WeA2 B. Olyaeefar, UNAM Institute of Materials Science and Nanotechnology Bilkent University: Watt-class single-mode edge-emitting lasers by non-Hermitian mode filtering

9:00 WeA3 S. Kamada, Furukawa Electric Co: 15xx nm High-Power Single Mode Fiber Output of Raman Pump Laser with Tapered Waveguide Asymmetric Laser Structure

9:15 WeA4 A. Imamura, Furukawa Electric Co: Design and Evaluation of AlGaInAs/GaInAsP “VVV” Type-II Quantum Wells for 1.3 μm Laser Emission

9:30 WeA5 A. Kasukawa, National Taiwan University of Science and Technology/Yushan Fellow, Ministry of Education Taiwan : COMD free InGaAs/AlGaAs 980nm lasers using SOI shadow mask growth

9:45 WeA6 G. Vasudevan Rajeswari, Fraunhofer Heinrich-Hertz-Institute: Ultra-Low Chirp DML Array for 144 Gbps per lane over 21 km Transmission

10:00 WeA7 T. Tsurugaya, Device Technology Labs: Membrane surface-emitting laser on metal-mirror-coated Si substrate exhibiting 50-Gbps NRZ operation in O-band

Foyer

Duetto 1

10:45 WeB1 Invited Prof. Maki Kushimoto, Nagoya University: Room Temperature CW UV-C Laser Diodes

11:15 WeB2 S. Yanagida, Sumitomo Electric Device Innovations: 300 mW High-Temperature (80°C) Operation of 1.3 μm SOAIntegrated DFB Laser for External Laser Sources

11:30 WeB3 N. Nishiyama, Institute of Science Tokyo: 1.3-μm λ/4-shifted superstructure grating DFB lasers for CW-WDM applications

11:45 WeB4 S. Sulikhah, National Taiwan University of Science and Technology/HiSiPIC: High-Power PCG-DFB Laser Integrated with SOA

12:00 WeB5 T.-H. Liu, Graduate Institute of Photonics and Optoelectronics National Taiwan University: Uncooled CW-DFB Laser achieving 177 mW power with Short Cavity and Low-Noise for High-Density CPO 

12:15 WeB6 M. Volpert, Université Grenoble Alpes: Wafer-scale CMOS-compatible integration of III-V/silicon DFB quantum cascade lasers for mid-infrared photonics

12:30 WeB7 P. Marin-Palomo, B-PHOT Vrije Universiteit Brussel: Single-gain-section multi-cavity Multi-Wavelength Laser in InP PIC for agile all-optical THz signal processing

12:45 WeB8 F. T. Albeladi, Department of Physical Sciences University of Jeddah: InAs Quantum Dot DFB Laser Using Integrated MMIR

Tampere Hall Restaurant

Duetto 1

14:00 WePL-1 Plenary Prof. Åsa Haglund, Chalmers University of Technology: GaN-based vertically-emitting lasers

14:45 WeL-1 Legend Prof. Elyahou Kapon, EPFL: Low-Dimensional Semiconductor Lasers: Facts and Fancy

Foyer

Duetto 1

15:45 WeC1 K. Komatsu, PETRA/Sumitomo/Institute of Science Tokyo: 120°-hybrid-based wavelength locker monolithically integrated in InP/Si tunable laser chip

16:00 WeC2 T. Kabir, Eindhoven University of Technology: First demonstration of a widely and continuously tunable integrated laser

16:15 WeC3 L. S. Davidov, Eindhoven University of Technology: New Scheme for Fast Tuning of an Integrated MMI-tree Arrayed Waveguide Grating for Continuously Tunable Lasers

16:30 WeC4 R. Wang, State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat-sen University: Hybrid integrated GaSb-silicon lasers with a wavelength tuning range of 90 nm in the 2.1 μm waveband

16:45 WeC5 Y. Yang, State Key Laboratory of Optoelectronic Materials and Devices Chinese Academy of Sciences: Packaged hybrid-integrated narrow-linewidth external-cavity semiconductor laser

17:00 WeC6 Y. Terada, Furukawa Electric Co: Narrow linewidth widely tunable external cavity laser using a gain chip integrated with a chirped DBR and a booster SOA 

17:15 WeC7 J. Viheriälä, Advanced Microelectronics Packaging group Tampere University: High-Power, Energy Efficient Hybrid DBR-MRR Laser for CO2 Detection at 2.7 µm 

17:30 WeC8 K. Merghem, SAMOVAR Télécom SudParis Institut Polytechnique de Paris: Broadband and Tunable Frequency Comb Generation using a Feedback-Controlled Quantum Dash Laser

Duetto 1