Tuesday programme
Tuesday 16.6.
8:30-10:45
TuA: Mid-IR and Cascade Lasers
Duetto 1
8:30 TuA1 Invited Prof. Luke Mawst, University of Wisconsin: Material and Design Considerations for InGaAs/AlInAs/InP Quantum Cascade Lasers Grown by MOCVD
9:00 TuA2 S. Hugger, Fraunhofer Institute for Applied Solid State Physics: Quantum Cascade Amplifiers for Coherent Beam
Combining and Spectroscopy
9:15 TuA3 R. Hashimoto, Toshiba Corporation Corporate Laboratory Production Innovation Technology Center: Surface‑Emitting Photonic Crystal Quantum Cascade Lasers and Surface‑illuminated Photonic Crystal Quantum Cascade Detectors for Gas sensing
9:30 TuA4 K. Groom, University of Sheffield: Hybrid Integration of Mid-IR Quantum Cascade Lasers on Ge-on-Si Platform
9:45 TuA5 J. Pérez-Urquizo, Hamamatsu Photonics: Room-Temperature Broadband Terahertz DifferenceFrequency Generation in a Modulation-Quantum-Well
QCL
10:00 TuA6 L. Kacel, Université de Montpellier/mirSense: Single-mode, interband cascade lasers grown on GaSb and GaAs substrates for CO gas detection
10:15 TuA7 L. A. Sterczewski, Wroclaw University of Science and Technology: Spectrally flat interband cascade laser frequency combs
10:30 TuA8 S. Sweeney, University of Glasgow/Zinir: Evidence for Dislocation Tolerance in Interband Cascade Lasers on Highly Mismatched Substrates
10:45-11:15
Coffee break
Foyer
11:15-12:45
TuB: VCSELs
Duetto 1
11:15 TuB1 F. Koyama, Institute of Science Tokyo: Record 60-GHz Bandwidth 1060-nm Single-Mode Metal-Aperture Coupled-Cavity VCSEL Enabling 256-Gbps PAM4 Direct Modulation
11:30 TuB2 J. Han, Yale University: InP VCSELS with Homoepitaxial and Nanoporous DBR mirrors
11:45 TuB3 V. Torrelli, Politecnico di Torino/IEIIT CNR: 22 mW single-mode axial-emitting 795 nm pin VCSELs
12:00 TuB4 G. Almuneau, LAAS-CNRS/Université de Toulouse: Molecular Beam Epitaxial Growth of Monolithic VCSELs on Germanium and Silicon
12:15 TuB5 K. D. Choquette, University of Illinois Urbana-Champaign: Coherent Leaky-Mode VCSEL Arrays
12:30 TuB6 J. Baker, Cardiff University: High-Power Single-Mode Multi-Junction VCSELs
12:45-13:45
Lunch
Tampere Hall Restaurant
13:45-15:00
Plenary session 2
Duetto 1
13:45 TuPL-1 Plenary Prof. Fumio Koyama, Institute of Science Tokyo: Celebrating 50 Years of VCSEL Innovation: Toward the Future of High-Speed and Energy-Efficient Optical Interconnects
14:30 TuL-1 Legend Prof. John E. Bowers, University of California Santa Barbara: Heterogeneously Integrated Lasers from 400 nm to 2 um Wavelength on Silicon
15:00-15:30
TuC: Quantum Dot Lasers
Duetto 1
15:00 TuC1 D. Hu, University of California Santa Barbara: Micro-Transfer Printed High Power O-Band Quantum Dot Lasers on Silicon
15:15 TuC2 X. Yang, North Carolina State University: Design and Experimental Strategies for Uni-Directional and Ultra-Low Threshold Hybrid Quantum Dot III-V/Si Micro-Ring Lasers
15:30-16:00
Coffee break
Foyer
16:00-18:00
TuC: Quantum Dot Lasers
Duetto 1
16:00 TuC3 Invited Dr. Johan-Peter Reithmaier, University of Kassel: Quantum Dot Materials for Lasers at Telecom Wavelengths
16:30 TuC4 S. A. Fortuna, Sandia National Laboratories: Radiation-defect-tolerant InAs quantum dot lasers
16:45 TuC5 H. Jia, University College London: Strain engineering for InAs/InP quantum dots
17:00 TuC6 M. Tang, University College London: High performance InAs/GaAs Quantum-Dot Lasers with 25 nm GaAs Spacer and high number dot layer
17:15 TuC7 T. Tanbun-Ek, Coherent: O-band QD lasers using phosphide alloy system claddings
17:30 TuC8 J.-S. Park, University College London: First room-temperature continuous-wave operation of InAs/InP quantum dot microdisk lasers beyond 2 µm
17:45 TuC9 B. Zhao, Hong Kong University of Science and Technology: TE and TM InP/GaAsP Dot-in-Well (DWELL) lasers through capping layer composition tuning